? semiconductor components industries, llc, 2014 november, 2014 ? rev. 7 1 publication order number: mje15028/d mje15028, mje15030 (npn), mje15029, mje15031 (pnp) complementary silicon plastic power transistors these devices are designed for use as high?frequency drivers in audio amplifiers. features ? high current gain ? bandwidth product ? to?220 compact package ? these devices are pb?free and are rohs compliant* maximum ratings rating symbol value unit collector?emitter voltage mje15028g, mje15029g mje15030g, mje15031g v ceo 120 150 vdc collector?base voltage mje15028g, mje15029g mje15030g, mje15031g v cb 120 150 vdc emitter?base voltage v eb 5.0 vdc collector current ? continuous i c 8.0 adc collector current ? peak i cm 16 adc base current i b 2.0 adc total device dissipation @ t c = 25 c derate above 25 c p d 50 0.40 w w/ c total device dissipation @ t a = 25 c derate above 25 c p d 2.0 0.016 w w/ c operating and storage junction temperature range t j , t stg ?65 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristics symbol max unit thermal resistance, junction?to?case r jc 2.5 c/w thermal resistance, junction?to?ambient r ja 62.5 c/w *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 8 ampere power transistors complementary silicon 120?150 volts, 50 watts to?220 case 221a style 1 1 http://onsemi.com marking diagram 2 3 mje150xx = device code x = 28, 29, 30, or 31 a = assembly location y = year ww = work week g = pb?free package mje150xxg ay ww see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information 4 1 base 3 emitter collector 2,4 1 base 3 emitter collector 2,4 npn pnp
mje15028, mje15030 (npn), mje15029, mje15031 (pnp) http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (note 1) (i c = 10 madc, i b = 0) mje15028, mje15029 mje15030, mje15031 v ceo(sus) 120 150 ? ? vdc collector cutoff current (v ce = 120 vdc, i b = 0) mje15028, mje15029 (v ce = 150 vdc, i b = 0) mje15030, mje15031 i ceo ? ? 0.1 0.1 madc collector cutoff current (v cb = 120 vdc, i e = 0) mje15028, mje15029 (v cb = 150 vdc, i e = 0) mje15030, mje15031 i cbo ? ? 10 10 adc emitter cutoff current (v be = 5.0 vdc, i c = 0) i ebo ? 10 adc on characteristics (note 1) dc current gain (i c = 0.1 adc, v ce = 2.0 vdc) (i c = 2.0 adc, v ce = 2.0 vdc) (i c = 3.0 adc, v ce = 2.0 vdc) (i c = 4.0 adc, v ce = 2.0 vdc) h fe 40 40 40 20 ? ? ? ? ? dc current gain linearity (v ce from 2.0 v to 20 v, i c from 0.1 a to 3 a) (npn to pnp) h fe typ 2 3 collector?emitter saturation voltage (i c = 1.0 adc, i b = 0.1 adc) v ce(sat) ? 0.5 vdc base?emitter on voltage (i c = 1.0 adc, v ce = 2.0 vdc) v be(on) ? 1.0 vdc dynamic characteristics current gain ? bandwidth product (note 2) (i c = 500 madc, v ce = 10 vdc, f test = 10 mhz) f t 30 ? mhz product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width 300 s, duty cycle 2.0%. 2. f t = ? h fe ?? f test . 0 figure 1. power derating t, temperature ( c) 0 40 60 100 120 160 40 t c 20 60 p d , power dissipation (watts) 0 2.0 t a 1.0 3.0 80 140 t c t a 20
mje15028, mje15030 (npn), mje15029, mje15031 (pnp) http://onsemi.com 3 t, time (ms) 0.01 0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal z jc(t) = r(t) r jc r jc = 1.56 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 single pulse resistance (normalized) figure 2. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.02 100 200 0.1 0.02 0.01 20 2.0 figure 3. forward bias safe operating area v ce , collector-emitter voltage (volts) 16 10 0.02 20 120 bonding wire limited thermally limited second breakdown limited @ t c = 25 c i c , collector current (amp) dc 100 s 5.0 10 150 1.0 50 0.1 5ms mje15028 mje15029 mje15030 mje15031 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. the data of figures 3 and 4 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 2. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 8.0 0 figure 4. reverse?bias switching safe operating area v ce , collector-emitter voltage (volts) 5.0 0 120 140 i c , collector current (amp) 5 v v be(off) = 9 v 100 110 150 3.0 130 2.0 1.0 v r , reverse voltage (volts) 10 150 500 1000 50 figure 5. capacitances 200 100 30 10 7.0 5.0 1.5 c, capacitance (pf) 3.0 20 50 i c /i b = 10 t c = 25 c 3 v 1.5 v c ib (npn) c ob (pnp) 100 30 0 v c ib (pnp) c ob (npn)
mje15028, mje15030 (npn), mje15029, mje15031 (pnp) http://onsemi.com 4 figure 6. small?signal current gain f, frequency (mhz) 1.0 3.0 10 20 100 h fe , small signal current gain 2.0 7.0 5.0 0.5 5.0 50 30 10 0.7 npn figure 7. current gain?bandwidth product i c , collector current (amp) 0.5 2.0 60 100 f t , current gain-bandwidth product (mhz) 1.0 10 20 0.1 5.0 90 50 0.2 pnp (npn) (pnp) v ce = 10 v i c = 0.5 a t c = 25 c 0 10 i c , collector current (amp) i c , collector current (amp) h fe , dc current gain figure 8. dc current gain figure 9. ?on? voltage i c , collector current (amp) 200 1k 10 0.1 150 100 70 30 0.2 10 1.0 5.0 2.0 0.5 t j = 25 c t j = 150 c 0.1 i c , collector current (amp) 1.6 1.2 1.0 0.6 0.2 t j = 25 c v, voltage (volts) npn ? mje15028 mje15030 pnp ? mje15029 mje15031 500 1k 200 100 50 20 10 h fe , dc current gain v ce = 2.0 v v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) = i c /i b = 20 v be(on) @ v ce = 2.0 v 1.8 1.4 1.0 0.8 0.4 0 i c /i b = 10 npn pnp 10 0.1 0.2 1.0 5.0 2.0 0.5 10 0.2 1.0 5.0 2.0 0.5 10 0.1 0.2 1.0 5.0 2.0 0.5 50 20 500 t j = 150 c t j = -55 c v ce = 2 v t j = -55 c t j = 25 c t j = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 2.0 v v ce(sat) = i c /i b = 20 i c /i b = 10
mje15028, mje15030 (npn), mje15029, mje15031 (pnp) http://onsemi.com 5 i c , collector current (amp) v cc = 80 v i c /i b = 10 t j = 25 c t d (npn, pnp) t r (pnp) figure 10. turn?on times 10 i c , collector current (amp) 5.0 3.0 2.0 1.0 0.5 figure 11. turn?off times 0.2 0.1 v cc = 80 v i c /i b = 10, i b1 = i b2 t s (npn) t j = 25 c 0.1 1.0 0.5 0.2 0.03 0.01 0.1 0.05 0.02 t, time (s) t, time (s) 10 0.2 1.0 5.0 2.0 0.5 10 0.1 0.2 0.3 5.0 2.0 0.5 t r (npn) t f (npn) t f (pnp) t s (pnp) ordering information device package shipping mje15028g to?220 (pb?free) 50 units / rail mje15029g to?220 (pb?free) 50 units / rail mje15030g to?220 (pb?free) 50 units / rail mje15031g to?220 (pb?free) 50 units / rail
mje15028, mje15030 (npn), mje15029, mje15031 (pnp) http://onsemi.com 6 package dimensions to?220 case 221a?09 issue ah style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mje15028/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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